FQB27P06TM Overview
Definition
The FQB27P06TM is a P-Channel enhancement mode power MOSFET from onsemi. Encased in the D2PAK (TO-263) package, it features excellent conductivity and high power-handling capability. Manufactured using onsemi's proprietary planar stripe DMOS technology, the device boasts low on-resistance (RDS(on)), high-efficiency switching characteristics, and strong avalanche energy capability, making it highly suitable for low-voltage applications.
Working Principle
As a P-channel enhancement-mode MOSFET, the FQB27P06TM operates based on electric field-controlled conduction. When the gate voltage is lower than the source voltage, the MOSFET turns on, allowing current to flow from the source to the drain for energy transfer. When the gate voltage approaches the source potential, the device turns off, blocking current flow. The FQB27P06TM features ultra-low switching delay and power loss, ensuring efficient and stable operation in power control applications.
FQB27P06TM Technical Specs
Parameter | Value |
Part Number | FQB27P06TM |
Description | MOSFET P-CH 60V 27A D2PAK |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Series | QFET® |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 13.5A, 10V |
Supplier Device Package | D²PAK (TO-263) |
Drain to Source Voltage (Vdss) | 60V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) |
Vgs (Max) | ±25V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Meta Part Number | FQB27P06TMTR-ND |
FQB27P06TM Pinout
As shown in the image, the FQB27P06TM has three main terminals: Gate (G), Source (S), and Drain (D). Their functions are as follows:
G (Gate):
The gate controls the switching of the MOSFET. When the gate voltage is lower than the source voltage, the device turns on, allowing current to flow from the source to the drain. When the gate voltage approaches the source potential, the device turns off, blocking current flow.
S (Source):
The source serves as the input terminal for current. In a P-channel MOSFET, current flows from the source to the drain. The source is typically connected to the higher potential side, providing the conduction path.
D (Drain):
The drain is the output terminal for current. When the device is turned on, current flows from the source through the channel to the drain, enabling power transfer.
FQB27P06TM Key Features
-27 A, -60 V, RDS(on) = 70 mΩ (Max) @VGS = -10 V, ID = -13.5 A
Low Gate Charge (Typ. 33 nC)
Low Crss (Typ. 120 pF)
100% Avalanche Tested
175°C Maximum Junction Temperature Rating
Planar Stripe DMOS Technology
RoHS Compliant
Pros
Enables minimal conduction losses for high-efficiency operation.
Excellent capability to manage high current and power loads.
Fast and efficient switching characteristics.
Against voltage spikes and transient energy events.
Cons
Its resistance is higher than a similarly sized N-Channel MOSFET.
Unsuitable for high-voltage applications.
FQB27P06TM Application Scenarios
1. Switched Mode Power Supplies (SMPS)
The FQB27P06TM, as a P-Channel MOSFET, can be used as a high-side switch to enable efficient energy conversion in Switched Mode Power Supplies. Its low on-resistance and fast switching characteristics reduce power dissipation and boost the efficiency of the power supply, making it particularly well-suited for high-frequency switching applications.
Example:
In 12V/24V desktop SMPS or laptop adapters, the FQB27P06TM can act as the high-side switch to control the stability of the output voltage, ensuring highly efficient power delivery.
2. Audio Amplifiers
The FQB27P06TM low RDS(on) and high current capacity make it ideal for use as an output stage switching component in audio power amplifiers. It can support driving large power loads while maintaining the clarity and stability of the audio signal.
Example:
It can be used as a power output transistor in car audio or home theater amplifiers to provide high-current drive to the speakers, allowing for clear, stable playback at high volumes.
3. DC Motor Control
Leveraging the P-Channel MOSFET's high-side switching capability, the FQB27P06TM can precisely control the start, stop, and speed adjustment of DC motors in H-bridge or unidirectional drive circuits. This results in smooth motor operation and rapid response to control signals.
Example:
The FQB27P06TM is utilized for high-side switching in systems like electric windows, electric fans, robotics drives, or small EV control systems to manage the speed and direction of 12V or 24V motors.
4. Variable Switching Power Applications
The FQB27P06TM can be combined with PWM control for power designs that require adjustable output voltage or current. It supports fast switching and high current transfer while allowing for flexible regulation of output parameters, making it ideal for programmable power supplies in laboratory or industrial settings.
Example:
In lab adjustable DC power supplies, dimmable LED drivers, or power modules, the FQB27P06TM controls the output voltage or current, enabling flexible load driving and protection.
FQB27P06TM Mechanical Dimensions
The FQB27P06TM uses the D2PAK package, which features a compact overall form factor, with a height of approximately 9.65-10.67mm, a width of around 12.70mm, and a thickness of 4-4.83 mm.
Its three pins are closely spaced with a pitch of 5.08 mm, simplifying PCB mounting and soldering. The bottom of the package includes a thermal pad; a recommended pad size of 6.40 mm x 5.08 mm is suggested to ensure good heat conduction performance. The pin length, which ranges from 1.14 mm to 1.78 mm, allows it to adapt to various soldering process requirements.
FAQs
What type of component is the FQB27P06TM ?
The FQB27P06TM is a P-Channel enhancement mode power MOSFET manufactured by onsemi. It is designed specifically for power switching applications.
What is the package type?
It comes in the D2PAK (TO-263) surface-mount package. For proper thermal management, it includes a thermal pad on the bottom.
Does being a P-Channel MOSFET affect its performance?
Yes. While convenient for high-side switching without complex driver circuitry, P-Channel MOSFETs generally have an inherently higher on-resistance compared to similarly sized N-Channel MOSFETs.
ANDE Electronics: Your Trusted Partner in Electronic Component Sourcing
At ANDE Electronics, we make getting the electronic parts you need simple and fast. We work directly with top global manufacturers to provide high-quality components that have passed our strict checks, so you can count on them for your projects.
We also focus on quick and consistent delivery to keep your work on schedule and avoid delays. When you need reliable and efficient electronic parts for your projects, ANDE Electronics is a partner you can trust.
